Mechanical, Toughness and Thermal properties of 2D Material- Reinforced Epoxy Composites

Developing epoxy composites with high thermal conductivity and excellent mechanical properties becomes imperative in electronic and aerospace industries. This study investigates and compares the effect of adding boron nitride (BN) sheets and graphene platelets (GnPs) on the mechanical properties and thermal conductivity of epoxy resin. The study shows that incorporation of BN or GnPs into epoxy matrix significantly enhanced both mechanical properties and thermal conductivity of epoxy composites. At fractions ranging 1–4 wt%, GnPs/epoxy composites provide higher Young’s modulus, fracture toughness (K1c) and critical stress energy release rate (G1c) compared to BN/epoxy composites. The thermal conductivity of the epoxy composites is up to the maximum of 0.33 Wm 1 K 1 at 4 wt% of GnP loading, which is much higher than that of the composites filled with the same loading of BN (0.23 Wm 1 K 1 ). The study emphasizes the importance of adding thin nanosheets (thickness 3–5 nm) at low loadings in developing epoxy composites to achieve desired mechanical and thermal properties

BN domains included into carbon nanotubes: role of interface

We present a density functional theory study on the shape and arrangement of small BN domains embedded into single-walled carbon nanotubes. We show a strong tendency for the BN hexagons formation at the simultaneous inclusion of B and N atoms within the walls of carbon nanotubes. The work emphasizes the importance of a correct description of the BN-C frontier. We suggest that BN-C interface will be formed preferentially with the participation of N-C bonds. Thus, we propose a new way of stabilizing the small BN inclusions through the formation of nitrogen terminated borders. The comparison between the obtained results and the available experimental data on formation of BN plackets within the single walled carbon nanotubes is presented. The mirror situation of inclusion of carbon plackets within single walled BN nanotubes is considered within the proposed formalism. Finally, we show that the inclusion of small BN plackets inside the CNTs strongly affects the electronic character of the initial systems, opening a band gap. The nitrogen excess in the BN plackets introduces donor states in the band gap and it might thus result in a promising way for n-doping single walled carbon nanotubes

Hydrogen storage properties of B- and N-doped microporous carbon

A B- and N-doped microporous carbon has been synthesized via a substitution reaction. The obtained carbon exhibited much higher surface area than the previously reported B- and N-doped carbon. The hydrogen storage measurements indicated that the B- and N-doped microporous carbon had a 53% higher storage capacity than the carbon materials with similar surface areas. Furthermore, hydrogen storage via spillover was studied on Ru-supported B- and N-doped microporous carbon and a storage capacity of 1.2 wt % at 298 K and 10 MPa was obtained, showing an enhancement factor of 2.2. Ab initio molecular orbital calculations were also performed for the binding energies between the spiltover hydrogen atom and various sites on the doped carbon. The theoretical calculations can explain the experimental results well, which also shed light on the most favorable and possible sites with which the spiltover hydrogen atoms bind. © 2009 American Institute of Chemical Engineers AIChE J, 2009Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/63091/1/11851_ftp.pd

Tuning the electronic properties of boron nitride nanotube by mechanical uni-axial deformation: a DFT study

The effect of uni-axial strain on the electronic properties of (8,0) zigzag and (5,5) armchair boron nitride nanotubes (BNNT) is addressed by density functional theory calculation. The stress-strain profiles indicate that these two BNNTS of differing types display very similar mechanical properties, but there are variations in HOMO-LUMO gaps at different strains, indicating that the electronic properties of BNNTs not only depend on uni-axial strain, but on BNNT type. The variations in nanotube geometries, partial density of states of B and N atoms, B and N charges are also discussed for (8,0) and (5,5) BNNTs at different strains

Large-Scale Fabrication of Boron Nitride Nanotubes via a Facile Chemical Vapor Reaction Route and Their Cathodoluminescence Properties

Cylinder- and bamboo-shaped boron nitride nanotubes (BNNTs) have been synthesized in large scale via a facile chemical vapor reaction route using ammonia borane as a precursor. The structure and chemical composition of the as-synthesized BNNTs are extensively characterized by X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, and selected-area electron diffraction. The cylinder-shaped BNNTs have an average diameter of about 100 nm and length of hundreds of microns, while the bamboo-shaped BNNTs are 100–500 nm in diameter with length up to tens of microns. The formation mechanism of the BNNTs has been explored on the basis of our experimental observations and a growth model has been proposed accordingly. Ultraviolet–visible and cathodoluminescence spectroscopic analyses are performed on the BNNTs. Strong ultraviolet emissions are detected on both morphologies of BNNTs. The band gap of the BNNTs are around 5.82 eV and nearly unaffected by tube morphology. There exist two intermediate bands in the band gap of BNNTs, which could be distinguishably assigned to structural defects and chemical impurities

Effect of Growth Temperature on Bamboo-shaped Carbon–Nitrogen (C–N) Nanotubes Synthesized Using Ferrocene Acetonitrile Precursor

This investigation deals with the effect of growth temperature on the microstructure, nitrogen content, and crystallinity of C–N nanotubes. The X-ray photoelectron spectroscopic (XPS) study reveals that the atomic percentage of nitrogen content in nanotubes decreases with an increase in growth temperature. Transmission electron microscopic investigations indicate that the bamboo compartment distance increases with an increase in growth temperature. The diameter of the nanotubes also increases with increasing growth temperature. Raman modes sharpen while the normalized intensity of the defect mode decreases almost linearly with increasing growth temperature. These changes are attributed to the reduction of defect concentration due to an increase in crystal planar domain sizes in graphite sheets with increasing temperature. Both XPS and Raman spectral observations indicate that the C–N nanotubes grown at lower temperatures possess higher degree of disorder and higher N incorporation

Managing hyperemesis gravidarum: a multimodal challenge

Up to 90% of pregnant women experience nausea and vomiting. When prolonged or severe, this is known as hyperemesis gravidarum (HG), which can, in individual cases, be life threatening. In this article the aetiology, diagnosis and treatment strategies will be presented based on a selective literature review. Treatment strategies range from outpatient dietary advice and antiemetic drugs to hospitalization and intravenous (IV) fluid replacement in persistent or severe cases. Alternative methods, such as acupuncture, are not yet evidence based but sometimes have a therapeutic effect

Graphene and Related Materials for Resistive Random Access Memories

Graphene and related materials (GRMs) are promising candidates for the fabrication of resistive random access memories (RRAM). Here, we analyze, classify and evaluate this emerging field, and summarize the performance of the RRAM prototypes using GRMs. Graphene oxide, amorphous carbon films, transition metal dichalcogenides, hexagonal boron nitride and black phosphorous can be used as resistive switching media, in which the switching can be governed either by the migration of intrinsic species or penetration of metallic ions from adjacent layers. Graphene can be used as electrode to provide flexibility and transparency, as well as an interface layer between the electrode and dielectric to block atomic diffusion, reduce power consumption, suppress surface effects, limit the number of conductive filaments in the dielectric, and improve device integration. GRMs-based RRAMs fit some non-volatile memory technological requirements like low operating voltages 10 years, endurance >109 cycles and power consumption ~10 pJ/transition still remain a challenge. More technology-oriented studies including reliability and variability analyses may lead to the development of GRMs-based RRAMs with realistic possibilities of commercialization.We acknowledge support from the Young 1000 Global Talent Recruitment Program of the Ministry of Education of China, the National Natural Science Foundation of China (grants no. 61502326, 41550110223), the Jiangsu Government (grant no. BK20150343), the Ministry of Finance of China (grant no. SX21400213), the Young 973 National Program of the Chinese Ministry of Science and Technology (grant no. 2015CB932700), the Collaborative Innovation Center of Suzhou Nano Science & Technology, the Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, the Priority Academic Program Development of Jiangsu Higher Education Institutions, the National Natural Science Foundation of China under Grant Nos. 61521064, 61322408, 61422407, the Beijing Training Project for the Leading Talents in S&T under Grant No. ljrc201508, the Opening Project of Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, the EU Graphene Flagship, FP7 Grant CARERAMM, ERC Grants Hetero2D and Highgraink, EPSRC Grants EP/K01711X/1, EP/K017144/1, EP/N010345/1, EP/M507799/1, EP/L016087/1, EP/M013243/1